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CORC

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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/15
Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 3, 页码: 3427-3434
作者:  WEI LIU ;   DEGANG ZHAO ;   DESHENG JIANG ;   DONGPING SHI ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   FENG LIANG ;   SHUANGTAO LIU ;   YAO XING ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19
The study of the contribution of the surface and bulk traps to the dynamic Rdson in AlGaN/GaN HEMT by light illumination 期刊论文
applied physics letters, 2016, 卷号: 109, 期号: 18, 页码: 182103
Yanan Liang; Lifang Jia; Zhi He; Zhongchao Fan; Yun Zhang; Fuhua Yang
收藏  |  浏览/下载：30/0  |  提交时间：2017/03/16
The study of the contribution of the surface and bulk traps to the dynamic Rdson in AlGaN/GaN HEMT by light illumination 期刊论文
applied physics letters, 2016, 卷号: 109, 期号: 18, 页码: 182103
Yanan Liang; Lifang Jia; Zhi He; Zhongchao Fan; Yun Zhang; Fuhua Yang
收藏  |  浏览/下载：20/0  |  提交时间：2017/03/16
Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Observation of n-shaped negative differential resistance in gaas-based modulation-doped field effect transistor with inas quantum dots 期刊论文
Japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: 5
作者:  Li, Yueqiang;  Wang, Xiaodong;  Xu, Xiaona;  Liu, Wen;  Chen, Yanling
收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124211
作者:  Wang H;  Yang H;  Yang H;  Jiang DS;  Zhao DG
收藏  |  浏览/下载：41/2  |  提交时间：2011/07/05

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