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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269 作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM 收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08 Cathodoluminescence  MOCVD  AlGaN   Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885 作者:  Wei TB;  Duan RF 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 VAPOR-PHASE EPITAXY   Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文 applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428 作者:  Duan RF;  Wei TB 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 GaN   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文 micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480 Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC 收藏  |  浏览/下载：145/32  |  提交时间：2010/03/09 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates 期刊论文 journal of electronic materials, 1999, 卷号: 28, 期号: 1, 页码: 1-5 Niu ZC; Notzel R; Jahn U; Schonherr HP; Fricke J; Ploog KH 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 high-index substrates  molecular beam epitaxy (MBE)  patterned growth  three-dimensionally confined nanostructures  SIDEWALL QUANTUM WIRES  GAAS  PHOTOLUMINESCENCE  DOTS  MOLECULAR-BEAM EPITAXY   Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 183, 期号: 1-2, 页码: 31-37 Li XB; Sun DZ; Kong MY; Yoon SF 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 SPATIALLY-RESOLVED CATHODOLUMINESCENCE  TEMPERATURE