Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

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	Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
	Duan RF; Wei TB
刊名	applied surface science
	2007
卷号	253 期号:18 页码:7423-7428
关键词	GaN
ISSN号	issn: 0169-4332
通讯作者	wei, tb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: tbwei@semi.ac.cn
中文摘要	large-scale gan free-standing substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. the bottom surface n-face and top surface ga-face showed great difference in anti-etching and optical properties. the variation of optical and structure characteristics were also microscopically identified using spatially resolved cathodoluminescence and micro-raman spectroscopy in cross-section of the gan substrate. three different regions were separated according to luminescent intensity along the film growth orientation. some tapered inversion domains with high free carrier concentration of 5 x 10(19) cm(-3) protruded up to the surface forming the hexagonal pits. the dark region of upper layer showed good crystalline quality with narrow donor bound exciton peak and low free carrier concentration. unlike the exponential dependence of the strain distribution, the free-standing gan substrate revealed a gradual increase of the strain mainly within the near n-polar side region with a thickness of about 50 mu m, then almost kept constant to the top surface. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9358]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Duan RF,Wei TB. Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer[J]. applied surface science,2007,253(18):7423-7428.
APA	Duan RF,&Wei TB.(2007).Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer.applied surface science,253(18),7423-7428.
MLA	Duan RF,et al."Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer".applied surface science 253.18(2007):7423-7428.