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科研机构
半导体研究所 [20]
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期刊论文 [12]
会议论文 [8]
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2011 [4]
2009 [2]
2008 [2]
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半导体材料 [20]
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High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films
期刊论文
ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Zhang, Feng
;
Sun, Guosheng
;
Huang, Huolin
;
Wu, Zhengyun
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Yan, Guoguo
;
Zheng, Liu
;
Dong, Lin
;
Zeng, Yiping
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Integrated circuits
Metal insulator boundaries
Photodetectors
Semiconducting silicon compounds
Semiconductor insulator boundaries
Silicon carbide
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:
Liu XF
;
Yan GG
;
Zheng L
;
Dong L
收藏
  |  
浏览/下载:37/3
  |  
提交时间:2011/07/05
4H-SiC
Raman scattering
LOPC modes
transport properties
SILICON-CARBIDE
LIGHT
GAP
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Yan, Guoguo
;
Sun, Guosheng
;
Wu, Hailei
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/06/14
Chemical vapor deposition
Deposition
Electric resistance
Epitaxial growth
Film growth
Sheet resistance
Silicon carbide
Silicon wafers
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/08
bulge test
fracture property
microelectromechanical systems (MEMS)
silicon carbide (SiC) thin films
Weibull distribution function
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:103/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
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