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Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes 会议论文
作者:  Jin C;  Wang FF;  Xu QQ;  Yu CZ;  Chen JX
收藏  |  浏览/下载：27/0  |  提交时间：2018/11/20
Microstructure characterization of lattice defects induced by As ion implantation in HgCdTe epilayers 会议论文
作者:  Shi CZ;  Lin C;  Wei YF;  Chen L
收藏  |  浏览/下载：21/0  |  提交时间：2018/11/20
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate 会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:  Chang, Yongwei;  Chen, Da;  Di, Zengfeng;  Zhang, Miao;  Yu, Wenjie
收藏  |  浏览/下载：0/0  |  提交时间：2017/01/20
Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy 会议论文
International Symposium on Photoelectronic Detection and Imaging:Infrared Imaging and Applications, Beijing, 2013-06-25
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收藏  |  浏览/下载：19/0  |  提交时间：2014/11/11
Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文
Chen X.; Zhang Z.; Yao B.; Jiang M.; Wang S.; Li B.; Shan C.; Liu L.; Zhao D.; Shen D.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25
Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.  
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：47/0  |  提交时间：2011/07/26
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文
6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007
Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：48/0  |  提交时间：2010/03/09
The reactivity of PtNi bimetallic catalyst: from model systems to supported catalysts 会议论文
18th international vacuum congress, 中国, 2010-8-23
慕仁涛; 傅强; 张辉; 王传付; 徐红; 翟润生; 谭大力; 包信和
收藏  |  浏览/下载：11/0  |  提交时间：2011/07/11
The role of lattice mismatch in the deposition of CdTe thin films 会议论文
JOURNAL OF ELECTRONIC MATERIALS, US Workshop on the Physics and Chemistry of II-VI Materials, Cambridge, MA, Web of Science
Neretina, S.; Zhang, Q.; Hughes, R. A.; Britten, J. F.; Sochinskii, N. V.; Preston, J. S.; Mascher, P.
收藏  |  浏览/下载：4/0

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