GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate

	GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate
	Chang, Yongwei; Chen, Da; Di, Zengfeng; Zhang, Miao; Yu, Wenjie; Wang, Xi
	2014-01-23
会议名称	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
会议日期	October 28, 2014 - October 31, 2014
会议地点	Guilin, China
关键词	Semiconducting gallium Bonding Chemical bonds Etching Gallium arsenide Germanium Molecular beam epitaxy Silicon oxides Silicon wafers Wafer bonding Annealing temperatures Bulk substrates Chemical etching Dose implantation Epitaxial GaAs High-crystalline quality Room temperature bonding Sacrificial layer
通讯作者	Yu, Wenjie
会议录	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
学科主题	Metallurgy and Metallography;Physical Chemistry; Chemical Products Generally; Coatings and Finishes
语种	英语
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184872]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Chang, Yongwei,Chen, Da,Di, Zengfeng,et al. GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate[C]. 见:2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Guilin, China. October 28, 2014 - October 31, 2014.