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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22 metalorganic chemical vapor deposition  Al1-xInxN  gradual variation in composition  optical reflectance spectra  X-RAY-DIFFRACTION  PHASE EPITAXY  RELAXATION  FILMS  HETEROSTRUCTURES  SEPARATION  DYNAMICS  ALLOYS  REGION  LAYERS   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文 thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.) 收藏  |  浏览/下载：60/2  |  提交时间：2010/08/17 Gallium Nitride  Indium Gallium Nitride  Cathodeluminescence  X-ray Diffraction  Metal-Organic Chemical Vapor Deposition   Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation 期刊论文 optical and quantum electronics, 2009, 卷号: 41, 期号: 8, 页码: 613-626 Xiao JL (Xiao Jin-Long); Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：89/2  |  提交时间：2010/08/17 Quantum dots (QDs)  Semiconductor optical amplifiers (SOAs)  Gain recovery  CARRIER DISTRIBUTION  DYNAMICS  SATURATION  RELAXATION  LASERS  MODEL   Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121 Liu, HY; Meng, ZM; Dai, QF; Wu, LJ; Guo, Q; Hu, W; Liu, SH; Lan, S; Yang, T 收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08 ENERGY RELAXATION  ELECTRON RELAXATION  CAPTURE  PHONON  INAS  GAAS  TEMPERATURE  DEPENDENCE  DENSITY  TIME   Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers 期刊论文 ieee journal of quantum electronics, 2008, 卷号: 44, 期号: 39939, 页码: 448-455 Xiao, JL; Huang, YZ 收藏  |  浏览/下载：37/1  |  提交时间：2010/03/08 gain  noise  quantum dots (QDs)  semiconductor-optical amplifiers (SOAs)   Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者:  Zhang SM 收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11 nitrides  multiple quantum wells  cracks  dislocations  vacancies x-ray diffraction  X-RAY-DIFFRACTION  EDGE DISLOCATIONS  GAN  FILMS  SUPERLATTICES  RELAXATION  STRAIN   Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105 Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  STRESS EVOLUTION  DEFECT STRUCTURE  EPITAXIAL GAN  THIN-FILMS  ALGAN  DISLOCATIONS  RELAXATION  REDUCTION   Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 Si1_xGex  Ge content  composition determination  double crystals X-ray diffraction (DCXRD)  micro-Raman measurement  BAND-GAP  HETEROSTRUCTURES  SUPERLATTICES  ALLOYS  RELAXATION  SCATTERING  THICKNESS  STRAIN   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES