Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation
Xiao JL (Xiao Jin-Long) ; Yang YD (Yang Yue-De) ; Huang YZ (Huang Yong-Zhen)
刊名optical and quantum electronics
2009
卷号41期号:8页码:613-626
关键词Quantum dots (QDs) Semiconductor optical amplifiers (SOAs) Gain recovery CARRIER DISTRIBUTION DYNAMICS SATURATION RELAXATION LASERS MODEL
通讯作者xiao, jl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jlxiao@semi.ac.cn
合作状况其它
英文摘要the gain recoveries in quantum dot semiconductor optical amplifiers (qd soas) are numerically studied by rate equation simulation. similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the qd soas. the obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. the gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. the fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of qds, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t02:25:09z no. of bitstreams: 1 investigation of gain recovery for inas gaas quantum dot semiconductor optical amplifiers by rate equation simulation.pdf: 475943 bytes, checksum: c312bf574ca1e370a918588ff8abfaae (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:27:39z (gmt) no. of bitstreams: 1 investigation of gain recovery for inas gaas quantum dot semiconductor optical amplifiers by rate equation simulation.pdf: 475943 bytes, checksum: c312bf574ca1e370a918588ff8abfaae (md5); made available in dspace on 2010-08-17t02:27:39z (gmt). no. of bitstreams: 1 investigation of gain recovery for inas gaas quantum dot semiconductor optical amplifiers by rate equation simulation.pdf: 475943 bytes, checksum: c312bf574ca1e370a918588ff8abfaae (md5) previous issue date: 2009; this work was supported by the national nature science foundation of china under grants 60777028, 60723002 and 60838003, and the major state basic research program under grant 2006cb302804; 其它
学科主题光电子学
收录类别SCI
资助信息this work was supported by the national nature science foundation of china under grants 60777028, 60723002 and 60838003, and the major state basic research program under grant 2006cb302804
语种英语
公开日期2010-08-17 ; 2010-10-15
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/13489]  
专题半导体研究所_集成光电子学国家重点实验室
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Xiao JL ,Yang YD ,Huang YZ . Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation[J]. optical and quantum electronics,2009,41(8):613-626.
APA Xiao JL ,Yang YD ,&Huang YZ .(2009).Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation.optical and quantum electronics,41(8),613-626.
MLA Xiao JL ,et al."Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation".optical and quantum electronics 41.8(2009):613-626.
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