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Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 14, 期号: 1, 页码: 2185–2193
作者:  Ma, Xiaolei;   Liu, Yue-Yang;   Zeng, Lang;   Chen, Jiezhi;   Wang, Runsheng;   Wang, Lin-Wang;   Wu, Yanqing;   Jiang, Xiangwei
收藏  |  浏览/下载：28/0  |  提交时间：2022/03/23
Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application 期刊论文
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 11, 页码: 117102
作者:  Xie, Hai-Qing;   Wu, Dan;   Deng, Xiao-Qing;   Fan, Zhi-Qiang;   Zhou, Wu-Xing;   Xiang, Chang-Qing;   Liu, Yue-Yang
收藏  |  浏览/下载：17/0  |  提交时间：2022/03/28
Recent research progress of ferroelectric negative capacitance field effect transistors 期刊论文
ACTA PHYSICA SINICA, 2020, 卷号: 69, 期号: 13, 页码: 137701
作者:  Chen Jun-Dong;   Han Wei-Hua;   Yang Chong;   Zhao Xiao-Song;   Guo Yang-Yan;   Zhang Xiao-Di;   Yang Fu-Hua
收藏  |  浏览/下载：9/0  |  提交时间：2021/06/28
Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 3, 页码: 038104
作者:  Liu-Hong Ma;   Wei-Hua Han;   Fu-Hua Yang
收藏  |  浏览/下载：10/0  |  提交时间：2021/11/30
Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2020, 卷号: 30, 期号: 15, 页码: 1910713
作者:  Quanshan Lv;   Faguang Yan;   Nobuya Mori;   Wenkai Zhu;   Ce Hu;   Zakhar R. Kudrynskyi;   Zakhar D. Kovalyuk;   Amalia Patanè;   Kaiyou Wang
收藏  |  浏览/下载：14/0  |  提交时间：2021/11/05
Relieving the Photosensitivity of Organic Field-Effect Transistors 期刊论文
ADVANCED MATERIALS, 2020, 卷号: 32, 期号: 4, 页码: 1906122
作者:  Jie Liu;   Longfeng Jiang;   Jia Shi;   Chunlei Li;   Yanjun Shi;   Jiahui Tan;   Haiyang Li;   Hui Jiang;  Yuanyuan Hu;   Xinfeng Liu;   Junsheng Yu;   Zhongming Wei;   Lang Jiang;   Wenping Hu
收藏  |  浏览/下载：34/0  |  提交时间：2021/12/20
High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors 期刊论文
NANOSCALE, 2020, 卷号: 12, 期号: 42, 页码: 21750-21756
作者:  Zhi-Qiang Fan;   Zhen-Hua Zhang;   Shen-Yuan Yang
收藏  |  浏览/下载：37/0  |  提交时间：2021/05/24
Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Wu,Jixuan;  Ma,Xiaolei;  Chen,Jiezhi;  Jiang,Xiangwei
收藏  |  浏览/下载：235/0  |  提交时间：2019/05/12
Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107303
作者:  Yang-Yan Guo;  Wei-Hua Han;  Xiao-Song Zhao;  Ya-Mei Dou;  Xiao-Di Zhang;  Xin-Yu Wu ;   Fu-Hua Yang
收藏  |  浏览/下载：10/0  |  提交时间：2020/08/05
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
作者:  Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/30

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