Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application

	Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application
	Xie, Hai-Qing; Wu, Dan; Deng, Xiao-Qing; Fan, Zhi-Qiang; Zhou, Wu-Xing; Xiang, Chang-Qing; Liu, Yue-Yang
刊名	CHINESE PHYSICS B
	2021
卷号	30 期号:11 页码:117102
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30846]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Xie, Hai-Qing; Wu, Dan; Deng, Xiao-Qing; Fan, Zhi-Qiang; Zhou, Wu-Xing; Xiang, Chang-Qing; Liu, Yue-Yang. Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application[J]. CHINESE PHYSICS B,2021,30(11):117102.
APA	Xie, Hai-Qing; Wu, Dan; Deng, Xiao-Qing; Fan, Zhi-Qiang; Zhou, Wu-Xing; Xiang, Chang-Qing; Liu, Yue-Yang.(2021).Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application.CHINESE PHYSICS B,30(11),117102.
MLA	Xie, Hai-Qing; Wu, Dan; Deng, Xiao-Qing; Fan, Zhi-Qiang; Zhou, Wu-Xing; Xiang, Chang-Qing; Liu, Yue-Yang."Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application".CHINESE PHYSICS B 30.11(2021):117102.