High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

	High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors
	Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang
刊名	NANOSCALE
	2020
卷号	12 期号:42 页码:21750-21756
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30023]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang. High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors[J]. NANOSCALE,2020,12(42):21750-21756.
APA	Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang.(2020).High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors.NANOSCALE,12(42),21750-21756.
MLA	Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang."High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors".NANOSCALE 12.42(2020):21750-21756.