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科研机构
北京大学 [36]
内容类型
期刊论文 [28]
其他 [8]
发表日期
2016 [2]
2015 [5]
2014 [2]
2013 [2]
2012 [6]
2011 [5]
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专题:北京大学
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Lattice thermal conductivity of penta-graphene
期刊论文
CARBON, 2016
Wang, Fancy Qian
;
Yu, Jiabing
;
Wang, Qian
;
Kawazoe, Yoshiyuki
;
Jena, Puru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
PHONON BOLTZMANN-EQUATION
LAYER GRAPHENE
TENSILE STRAINS
TRANSPORT
Resolved-sideband Raman cooling of an optical phonon in semiconductor materials
期刊论文
NATURE PHOTONICS, 2016
Zhang, Jun
;
Zhang, Qing
;
Wang, Xingzhi
;
Kwek, Leong Chuan
;
Xiong, Qihua
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/04
QUANTUM GROUND-STATE
CAVITY OPTOMECHANICS
LASER
MANIPULATION
OSCILLATOR
RESONATOR
SOLIDS
MOTION
Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs
期刊论文
ieee电子器件汇刊, 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Wei, Kangliang
;
Du, Gang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Hole mobility
InSb
modeling
MOSFETs
scattering
self-consistent
six-band k . p
ultrathin body (UTB)
V COMPOUND SEMICONDUCTORS
INVERSION-LAYER MOBILITY
DEFORMATION POTENTIALS
SURFACE ORIENTATION
QUANTUM-WELLS
ON-INSULATOR
BAND
THICKNESS
PHYSICS
Hole mobility enhancements in strained InxGa1-xSb heterostructure p-channel MOSFETs
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
V COMPOUND SEMICONDUCTORS
ON-INSULATOR
SI
PHYSICS
ALLOYS
GE
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
其他
2015-01-01
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
期刊论文
44th European Solid-State Device Research Conference (ESSDERC), 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Hole mobility enhancements in strained InxGa1-xSb heterostructure p-channel MOSFETs
其他
2015-01-01
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/04
V COMPOUND SEMICONDUCTORS
ON-INSULATOR
SI
PHYSICS
ALLOYS
GE
Intrinsic carrier mobility of Dirac cones: The limitations of deformation potential theory
期刊论文
journal of chemical physics, 2014
Li, Zhenzhu
;
Wang, Jinying
;
Liu, Zhirong
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/11
EMBEDDED GRAPHENE
ENERGY
Hole Mobility in InSb-Based Devices: Dependency on Surface Orientation, Body Thickness and Strain
其他
2014-01-01
Chang, Pengying
;
Zeng, Lang
;
Liu, Xiaoyan
;
Du, Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Multiple-timescale relaxation dynamics in CsGd(MoO4)(2)-a dipolar magnet with a highly anisotropic layered crystal structure
期刊论文
journal of physics condensed matter, 2013
Tkac, V.
;
Orendacova, A.
;
Tarasenko, R.
;
Cizmar, E.
;
Orendac, M.
;
Tibenska, K.
;
Anders, A. G.
;
Gao, S.
;
Pavlik, V.
;
Feher, A.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/16
SPIN-LATTICE RELAXATION
RARE-EARTH MOLYBDATES
PARAMAGNETIC RELAXATION
THERMAL-CONDUCTIVITY
SOUND-ATTENUATION
EXPONENTS
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