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	Hole Mobility in InSb-Based Devices: Dependency on Surface Orientation, Body Thickness and Strain
	Chang, Pengying ; Zeng, Lang ; Liu, Xiaoyan ; Du, Gang
	2014
英文摘要	This work presents an investigation on hole mobility in InSb-based ultra-thin body (UTB) devices with arbitrary surface orientation, body thickness and biaxial strain. The anisotropic band structures with quantum confinement are computed using a fully self-consistent solver for six-band k.p Schrdinger and Poisson equations. Hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons and surface roughness scattering. The models are calibrated by fitting the experimental data. Our results suggest that for T-B<10nm, mobility trend with surface orientation and channel directions for InSb devices is: (110)/[<(1)over bar>11)>(110)/[001]>(001), where devices with (111) have more excellent behavior than for Si. In addition, biaxial compressive strain introduces maximum mobility gain in the (110)/[(1) over bar 10] case. Nevertheless, (110)/[(1) over bar 10] is the optimal surface and channel direction for InSb-based UTB devices, followed by (111) orientation.; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 1
语种	英语
DOI标识	10.1109/ESSDERC.2014.6948773
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292412]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chang, Pengying,Zeng, Lang,Liu, Xiaoyan,et al. Hole Mobility in InSb-Based Devices: Dependency on Surface Orientation, Body Thickness and Strain. 2014-01-01.

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