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科研机构
半导体研究所 [14]
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期刊论文 [12]
会议论文 [2]
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2011 [1]
2010 [1]
2008 [1]
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半导体材料 [14]
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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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  |  
浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai)
;
Fan ZD (Fan Zhi-Dong)
;
Bai ZH (Bai Zhen-Hua)
;
Ma L (Ma Lei)
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  |  
浏览/下载:140/29
  |  
提交时间:2010/04/21
silicon nanowires
Au-Si liquid droplet alloys
solid-liquid-solid growth
structural characteristics
SI NANOWIRES
NI CATALYSTS
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
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  |  
浏览/下载:49/0
  |  
提交时间:2010/03/08
bulge test
fracture property
microelectromechanical systems (MEMS)
silicon carbide (SiC) thin films
Weibull distribution function
The correlation between preferred orientation and performance of ITO thin films
期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18 suppl.1, 期号: 0, 页码: s411-s414
Chen Y (Chen Yao)
;
Zhou YQ (Zhou Yuqin)
;
Zhang QF (Zhang Qunfang)
;
Zhu MF (Zhu Meifang)
;
Liu FZ (Liu Fengzhen)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
ELECTRICAL-PROPERTIES
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
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浏览/下载:42/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:
Yin ZG
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  |  
浏览/下载:54/0
  |  
提交时间:2010/04/11
crystal structure
thermal annealing
X-ray diffraction
RF magnetron sputtering
zinc oxide
semiconducting II-VI materials
P-TYPE ZNO
SPRAY-PYROLYSIS
ZINC-OXIDE
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2069-2073
作者:
Wang Jun
;
Wang Jun
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/23
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508
Chen, Z
;
Chua, SJ
;
Yuan, HR
;
Liu, XL
;
Lu, DC
;
Han, PD
;
Wang, ZG
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  |  
浏览/下载:269/35
  |  
提交时间:2010/03/09
metalorganic chemical vapor deposition
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Han PD
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  |  
浏览/下载:83/1
  |  
提交时间:2010/10/29
metalorganic chemical vapor deposition
semiconducting III-V materials
DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES
CARRIER CONFINEMENT
EFFECT TRANSISTORS
PHOTOLUMINESCENCE
MOBILITY
HETEROJUNCTION
INTERFACE
HFETS
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