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	Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
	Zhao, YM ; Sun, GS ; Liu, XF ; Li, JY ; Zhao, WS ; Wang, L ; Luo, MC ; Li, JM
刊名	modern physics letters b
	2007
卷号	21期号:22页码:1437-1445
关键词	aluminum nitride low pressure metalorganic chemical vapor deposition (LP-MOCVD) V/III ratio preferential orientation growth mechanism
ISSN号	0217-9849
通讯作者	zhao, ym, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: ymzhao@semi.ac.cn
中文摘要	aluminum nitride (ain) thin films were deposited on si (111) substrates by low pressure metalorganic chemical vapor deposition system. the effects of the v/iii ratios on the film structure and surface morphology were systematically studied. the chemical states and vibration modes of ain films were characterized by x-ray photoelectron spectroscopy and fourier transform infrared spectrometer. the optical absorption property of the ain films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. the ain (002) preferential orientation growth was obtained at the v/iii ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the ain growth.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6924]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, YM,Sun, GS,Liu, XF,et al. Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD[J]. modern physics letters b,2007,21(22):1437-1445.
APA	Zhao, YM.,Sun, GS.,Liu, XF.,Li, JY.,Zhao, WS.,...&Li, JM.(2007).Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD.modern physics letters b,21(22),1437-1445.
MLA	Zhao, YM,et al."Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD".modern physics letters b 21.22(2007):1437-1445.

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