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| Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
  收藏 | 浏览/下载：36/4 | 提交时间：2011/07/05
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| Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏 | 浏览/下载：67/8 | 提交时间：2011/07/05
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| Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者: Yang H; Zhao DG ; Zhu JJ; Yang H; Zhang SM
收藏 | 浏览/下载：182/43 | 提交时间：2010/03/08
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| Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin)
收藏 | 浏览/下载：58/0 | 提交时间：2010/04/11
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| Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition 期刊论文
applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 1, 页码: 141-144
Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi, Y; Zheng YD; Sun XH; Wan SK; Wang ZG
收藏 | 浏览/下载：118/41 | 提交时间：2010/03/09
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| GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56
Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi Y; Zheng YD; Sun XH; Wan SK; Wang ZG
收藏 | 浏览/下载：470/1 | 提交时间：2010/08/12
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者: Xu B; Li CM; Jin P; Ye XL; Li DB
收藏 | 浏览/下载：97/0 | 提交时间：2010/08/12
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| Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:
收藏 | 浏览/下载：84/5 | 提交时间：2010/08/12
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| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:
收藏 | 浏览/下载：84/7 | 提交时间：2010/08/12
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| Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells 期刊论文
semiconductor science and technology, 2001, 卷号: 16, 期号: 10, 页码: 822-825
作者:
收藏 | 浏览/下载：73/4 | 提交时间：2010/08/12
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