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| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者: Jia CH ; Song HP
  收藏 | 浏览/下载：118/2 | 提交时间：2011/07/05
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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者: Xu B; Jin P; Ye XL
收藏 | 浏览/下载：63/1 | 提交时间：2011/07/05
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| Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏 | 浏览/下载：49/2 | 提交时间：2011/07/05
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| Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者: Zhao J
收藏 | 浏览/下载：43/4 | 提交时间：2011/07/05
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| Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Luo MC; Wang XL; Li JM; Liu HX; Wang L; Sun DZ; Zeng YP; Lin LY
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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| Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK
收藏 | 浏览/下载：99/7 | 提交时间：2010/08/12
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| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH
收藏 | 浏览/下载：81/6 | 提交时间：2010/08/12
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| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY
收藏 | 浏览/下载：11/0 | 提交时间：2010/11/15
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| Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
作者: Zhao DG
收藏 | 浏览/下载：34/0 | 提交时间：2010/08/12
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| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 期刊论文
optical materials, 2000, 卷号: 14, 期号: 3, 页码: 201-204
Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY
收藏 | 浏览/下载：42/0 | 提交时间：2010/08/12
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