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CORC

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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms 期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL; Gaspar, J; Paul, O
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08
Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544
Cui JP; Duan Y; Wang XF; Zeng YP
收藏  |  浏览/下载：220/122  |  提交时间：2010/03/08
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
MBE Growth of High Electron Mobility InP Epilayers 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1485-1488
作者:  Xu Bo
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
作者:  Li DB;  Wei HY;  Han XX
收藏  |  浏览/下载：58/22  |  提交时间：2010/03/17
cracks  
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/17
cracks  
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Wei X; Wang GH; Zhang GZ; Zhu XP; Ma XY; Chen LH
收藏  |  浏览/下载：81/2  |  提交时间：2010/08/12
The fabrication of thick SiO2 layer by anodization 会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
The fabrication of thick SiO2 layer by anodization 期刊论文
optical materials, 2000, 卷号: 14, 期号: 3, 页码: 271-275
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12

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