Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

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	Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors
	Wei X ; Wang GH ; Zhang GZ ; Zhu XP ; Ma XY ; Chen LH
刊名	journal of crystal growth
	2002
卷号	236 期号:4 页码:516-522
关键词	high resolution X-ray diffraction precursor metalorganic chemical vapor depositions gallium compounds LASER-DIODES SOLAR-CELLS BAND-GAP GAINNAS DIMETHYLHYDRAZINE GROWTH PYROLYSIS EPITAXY
ISSN号	0022-0248
通讯作者	wei x,chinese acad sci,inst semicond,natl engn res ctr optoelect devices,pob 912,beijing 100083,peoples r china.
中文摘要	the ganas alloys have been grown by metalorganic chemical vapor deposition (mocvd) using dimethylhydrazine (dmhv) as the nitrogen precursor, triethylgallium (tega) and trimethylgallium (tmga) as the gallium precursors, respectively. both symmetric (004) and asymmetric (1 1 5) high-resolution x-ray diffraction (hrxrd) were used to determine the nitrogen content in ganas layers. secondary ion mass spectrometry (sims) was used to obtain the impurity content. t e influence of different ga precursors on ganas quality has been investigated. phase separation is observed in the < 1 1 5 > direction when using tmga as the ga precursor but not observed when using tega. this phenomenon should originate from the parasitic reaction between the ga and n precursors. furthermore. samples grown with tega have better quality and less impurity contamination than those with tmga. nitrogen content of 5.742% has been achieved using tega and no phase separation observed in the sample. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11918]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei X,Wang GH,Zhang GZ,et al. Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors[J]. journal of crystal growth,2002,236(4):516-522.
APA	Wei X,Wang GH,Zhang GZ,Zhu XP,Ma XY,&Chen LH.(2002).Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors.journal of crystal growth,236(4),516-522.
MLA	Wei X,et al."Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors".journal of crystal growth 236.4(2002):516-522.