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科研机构
半导体研究所 [42]
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会议论文 [42]
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2010 [2]
2009 [2]
2008 [2]
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2006 [11]
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半导体材料 [42]
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内容类型:会议论文
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Donor defect in P-diffused bulk ZnO single crystal
会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
收藏
  |  
浏览/下载:461/158
  |  
提交时间:2010/10/11
Zinc Oxide
doping
defect
Dependence of transport properties in tunnel junction on boron doping
会议论文
23rd international conference on amorphous and nanocrystalline semiconductors (icans23), utrecht, netherlands, aug 23-28, 2009
Shi MJ
;
Zeng XB
;
Liu SY
;
Peng WB
;
Xiao HB
;
Liao XB
;
Wang ZG
;
Kong GL
收藏
  |  
浏览/下载:43/2
  |  
提交时间:2011/07/15
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:
Ma WQ
;
Cao YL
;
Yang T
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
DENSITY-OF-STATES
Morphology and wetting layer properties of InAs/GaAs nanostructures
会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:
Xu B
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:89/9
  |  
提交时间:2010/03/29
AVALANCHE PHOTODIODES
AREA
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:118/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Research on the band-gap of InN grown on siticon substrates
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:100/15
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
WURTZITE INN
NITRIDE
ABSORPTION
ALLOYS
FILMS
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