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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Efficient and controllable growth of vertically oriented graphene nanosheets by mesoplasma chemical vapor deposition 期刊论文 CARBON, 2019, 卷号: 147, 页码: 341-347 作者:  Zhang, Huan;  Wu, Sudong;  Lu, Ziyu;  Chen, Xinchun;  Chen, Qixian 收藏  |  浏览/下载：25/0  |  提交时间：2019/12/02 Aspect ratio  Graphene  Growth rate  Nanosheets  Plasma enhanced chemical vapor deposition, Controllable growth  Controllable structures  Deposition precursors  Graphene nanosheets  High-quality films  Nano-architecture  Plasma enhanced chemical vapor depositions (PE CVD)  Structure transitions, Plasma CVD   Facile growth of vertically-aligned graphene nanosheets via thermal CVD: The experimental and theoretical investigations 期刊论文 CARBON, 2017, 卷号: 121, 页码: 1-9 作者:  Wang, Huaping;  Gao, Enlai;  Liu, Peng;  Zhou, Duanliang;  Geng, Dechao 收藏  |  浏览/下载：29/0  |  提交时间：2018/04/13 Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications 期刊论文 ADVANCED SCIENCE, 2016, 卷号: 3, 期号: 11, 页码: 23 作者:  Li, Menglin;  Liu, Donghua;  Wei, Dacheng;  Song, Xuefen;  Wei, Dapeng 收藏  |  浏览/下载：21/0  |  提交时间：2018/03/15 Synthesis of Graphene on Dielectric Substrates 期刊论文 ACTA CHIMICA SINICA, 2014, 卷号: 72, 期号: 3, 页码: 359-366 作者:  Chen Jisi;  Wu Bin;  Liu Yunqi 收藏  |  浏览/下载：12/0  |  提交时间：2019/04/09 Graphene  Chemical Vapour Deposition  Dielectric Layer  Hexagonal Boron Nitride   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE