Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

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	Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD
	Xu, K (徐科); Wang, JF (王建峰); Zhang, M (张敏); Huang, J (黄俊)
	2011-03-01
会议名称	16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
会议日期	AUG 08-13, 2010
会议地点	Beijing, PEOPLES R CHINA
英文摘要	A-plane gallium nitride (GaN) layers were grown on gamma-LiAlO2 (3 0 2) by metal-organic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.
收录类别	SCI ; CPCI（ISTP）
会议录	JOURNAL OF CRYSTAL GROWTH
语种	英语
WOS记录号	WOS:000289653900101
内容类型	会议论文
源URL	[http://ir.sinano.ac.cn/handle/332007/589]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Xu, K ,Wang, JF ,Zhang, M ,et al. Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD[C]. 见:16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14). Beijing, PEOPLES R CHINA. AUG 08-13, 2010.