Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN

	Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN
	Fu, Houqiang; Yang, Tsung-Han; Xu, Ke(徐科); Ponce, Fernando A.; Zhang, Baoshun(张宝顺); Zhao, Yuji; Baranowski, Izak; Chen, Hong; Huang, Xuanqi; Alugubelli, Shanthan R.
刊名	APPLIED PHYSICS EXPRESS
	2018
其他题名	Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6167]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Fu, Houqiang,Yang, Tsung-Han,Xu, Ke,et al. Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN[J]. APPLIED PHYSICS EXPRESS,2018.
APA	Fu, Houqiang.,Yang, Tsung-Han.,Xu, Ke.,Ponce, Fernando A..,Zhang, Baoshun.,...&Zhang, Xiaodong.(2018).Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN.APPLIED PHYSICS EXPRESS.
MLA	Fu, Houqiang,et al."Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN".APPLIED PHYSICS EXPRESS (2018).