CORC

在结果中检索

CORC

浏览/检索结果: 共15条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 208
作者:  Huang, Yuqing;  Liao, Mingdun;  Wang, Zhixue;  Guo, Xueqi;  Jiang, Chunsheng
收藏  |  浏览/下载：16/0  |  提交时间：2020/12/16
The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Hu,Wei;  Die,Junhui;  Wang,Caiwei;  Yan,Shen;  Hu,Xiaotao
收藏  |  浏览/下载：144/0  |  提交时间：2019/05/09
Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots 期刊论文
NANOTECHNOLOGY, 2017, 卷号: 28
作者:  Liu, Jia;  Liu, Bin;  Zhang, Xisheng;  Guo, Xiaojia;  Liu, Shengzhong (Frank)
收藏  |  浏览/下载：60/0  |  提交时间：2017/10/29
The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li
收藏  |  浏览/下载：17/0  |  提交时间：2018/11/30
原位SiNx预处理改善InGaN/GaN量子阱晶体质量与发光特性 学位论文
2016, 2016
黄德猛
收藏  |  浏览/下载：14/0  |  提交时间：2017/06/20
Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 卷号: 41, 页码: 291-296
作者:  Tao, Pengcheng;  Liang, Hongwei;  Xia, Xiaochuan;  Chen, Yuanpeng;  Yang, Chao
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09
Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 页码: 10003-10009
作者:  Huang, Zhen;  Zhang, Yuantao;  Deng, Gaoqiang;  Li, Baozhu;  Cui, Shuang
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09
Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: [db:dc_citation_issue], 页码: 1862-1869
作者:  Lu, Xing;  Ma, Jun;  Jiang, Huaxing;  Liu, Chao;  Xu, Peiqiang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
Influence of adsorption kinetics on stress evolution in magnetron-sputtered SiO2 and SiNx films 期刊论文
j. appl. phys., 2013, 卷号: 114, 期号: 3, 页码: 034305
作者:  Li, Jingping;  Fang, Ming;  He, Hongbo;  Shao, Jianda;  Li, Zhaoyang
收藏  |  浏览/下载：13/0  |  提交时间：2016/11/28
Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 2923-2927
作者:  Song, Shiwei;  Liu, Yang;  Liang, Hongwei;  Yang, Dechao;  Zhang, Kexiong
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11

©版权所有 ©2017 CSpace - Powered by CSpace