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	Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer
	Huang, Zhen; Zhang, Yuantao; Deng, Gaoqiang; Li, Baozhu; Cui, Shuang; Liang, Hongwei; Chang, Yuchun; Song, Junfeng; Zhang, Baolin; Du, Guotong
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2016
卷号	27页码:10003-10009
ISSN号	0957-4522
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4370146
专题	大连理工大学
作者单位	1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Zhen,Zhang, Yuantao,Deng, Gaoqiang,et al. Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27:10003-10009.
APA	Huang, Zhen.,Zhang, Yuantao.,Deng, Gaoqiang.,Li, Baozhu.,Cui, Shuang.,...&Du, Guotong.(2016).Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,27,10003-10009.
MLA	Huang, Zhen,et al."Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 27(2016):10003-10009.

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