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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：29/0  |  提交时间：2017/03/10 Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011204 Xiaojing Li; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Jing Yang; Xiaoguang He; Liqun Zhang; Shuming Zhang; Jianping Liu; Hui Yang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10 Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209 Lingcong Le; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaojing Li; Xiaoguang He; Jianping Liu; Shuming Zhang; Hui Yang 收藏  |  浏览/下载：16/0  |  提交时间：2016/03/23 Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd 期刊论文 Microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 作者:  Luo, Weijun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimie;  Ran, Junxue 收藏  |  浏览/下载：43/0  |  提交时间：2019/05/12 Algan/gan  High electron mobility transistor (hemt)  Si (111)   MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525 作者:  Xiao Hongling;  Wang Cuimei 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23