Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

	Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes
	Wei Liu ; Degang Zhao ; Desheng Jiang ; Ping Chen ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Xiaoguang He ; Xiaojing Li ; Xiang Li ; Feng Liang ; Jianping Liu ; Liqun Zhang ; Hui Yang ; Yuantao Zhang ; Guotong Du
刊名	superlattices and microstructures
	2016
卷号	96 页码:220-225
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27877]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Wei Liu,Degang Zhao,Desheng Jiang,et al. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes[J]. superlattices and microstructures,2016,96:220-225.
APA	Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes.superlattices and microstructures,96,220-225.
MLA	Wei Liu,et al."Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes".superlattices and microstructures 96(2016):220-225.