Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

	Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
	Wei Liu ; Degang Zhao ; Desheng Jiang ; Ping Chen ; Zongshun Liu ; Jianjun Zhu ; Xiang Li ; Feng Liang ; Jianping Liu ; Liqun Zhang ; Hui Yang ; Yuantao Zhang ; Guotong Du
刊名	Journal of Physics D: Applied Physics
	2016
卷号	49 期号:14 页码:145104
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27875]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Wei Liu,Degang Zhao,Desheng Jiang,et al. Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes[J]. Journal of Physics D: Applied Physics,2016,49(14):145104.
APA	Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Guotong Du.(2016).Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes.Journal of Physics D: Applied Physics,49(14),145104.
MLA	Wei Liu,et al."Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes".Journal of Physics D: Applied Physics 49.14(2016):145104.