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| The impact of indium tin oxide deposition and post annealing on the passivation property of TOPCon solar cells 期刊论文 Solar Energy, 2018 作者: Zhang PF(张鹏飞); Tao K(陶科); Jiang S(姜帅); Jia R(贾锐); Zhou Y(周颖) 收藏  |  浏览/下载:26/0  |  提交时间:2019/04/19 |
| The influence of surface structure on diffusion and passivation in multicrystalline silicon solar cells textured by metal assisted chemical etching (MACE) method 期刊论文 Solar Energy Materials and Solar Cells, 2018 作者: Zhang PF(张鹏飞); Liu XY(刘新宇); Jin Z(金智); Dai XW(戴小宛); Jia R(贾锐) 收藏  |  浏览/下载:20/0  |  提交时间:2019/04/19 |
| Understanding dipole formation at dielectric/dielectric hetero-interface 期刊论文 APPLIED PHYSICS LETTERS, 2018 作者: Wang YR(王艳蓉); Xiang JJ(项金娟); Yang H(杨红); Jing Zhang; Zhao C(赵超) 收藏  |  浏览/下载:40/0  |  提交时间:2019/05/20 |
| Identification of interfacial defects in a Ge gate stack based on ozone passivation 期刊论文 Semiconductor Science and Technology, 2018 作者: Wang YR(王艳蓉); Xiang JJ(项金娟); Yang H(杨红); Zhang J(张静); Zhao C(赵超) 收藏  |  浏览/下载:38/0  |  提交时间:2019/05/20 |
| The total ionizing dose response of leading-edge FDSOI MOSFETs 会议论文 作者: Wang J(王剑); Li BH(李彬鸿); Huang Y(黄杨); K.Zhao; F.Yu 收藏  |  浏览/下载:23/0  |  提交时间:2019/05/13 |
| Comprehensive investigation of the interfacial charges and dipole in GeOx/Al2O3 gate 期刊论文 Japanese Journal of Applied Physics, 2018 作者: Wang YR(王艳蓉); Xiang JJ(项金娟); Yang H(杨红); Zhang J(张静); Zhao C(赵超) 收藏  |  浏览/下载:30/0  |  提交时间:2019/05/20 |
| Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology 期刊论文 ECS Journal of Solid State Science and Technology, 2018 作者: Zhang QZ(张青竹); Yao JX(姚佳欣); Yin HX(殷华湘); Wu ZH(吴振华); Gao JF(高建峰) 收藏  |  浏览/下载:52/0  |  提交时间:2019/05/05 |
| Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node 期刊论文 Journal of the Electron Devices Society, 2018 作者: Gu J(顾杰); Wen Yang; Wu ZH(吴振华); Yin HX(殷华湘); Wang WW(王文武) 收藏  |  浏览/下载:30/0  |  提交时间:2019/05/05 |
| High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz 期刊论文 IEEE Electron Device Letters, 2018 作者: Zheng YK(郑英奎); Liu GG(刘果果); Chen XJ(陈晓娟); Wang XH(王鑫华); Huang S(黄森) 收藏  |  浏览/下载:17/0  |  提交时间:2019/04/19 |
| BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond 会议论文 作者: Lv HB(吕杭炳); Xu XX(许晓欣); Yuan P(袁鹏); Dong DN(董大年); Gong TC(龚天成) 收藏  |  浏览/下载:26/0  |  提交时间:2018/07/26 |