High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz

	High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz
	Zheng YK(郑英奎); Liu GG(刘果果); Chen XJ(陈晓娟); Wang XH(王鑫华); Huang S(黄森); Wei K(魏珂); Li YK(李艳奎); Zhang YC(张一川); Liu XY(刘新宇)
刊名	IEEE Electron Device Letters
	2018-05-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18977]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zheng YK,Liu GG,Chen XJ,et al. High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz[J]. IEEE Electron Device Letters,2018.
APA	Zheng YK.,Liu GG.,Chen XJ.,Wang XH.,Huang S.,...&Liu XY.(2018).High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz.IEEE Electron Device Letters.
MLA	Zheng YK,et al."High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz".IEEE Electron Device Letters (2018).