CORC

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CORC

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The effect of cavities on recrystallization growth of high-fluence He implanted-SiC 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 卷号: 509, 页码: 68-72
作者:  Zhang, Tongmin;  He, Xiaoxun;  Chen, Limin;  Li, Jun;  Liao, Qing
收藏  |  浏览/下载：33/0  |  提交时间：2022/01/07
Recrystallization Phase in He-Implanted 6H-SiC 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 页码: 4
作者:  Lin, Hua;  Zhang, Li;  Liu, Yu-Zhu;  Li, Bing-Sheng
收藏  |  浏览/下载：8/0  |  提交时间：2018/05/31
Recrystallization of He-ion implanted 6H-SiC upon annealing 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 卷号: 345, 页码: 53-57
作者:  Li, B. S.;  Du, Y. Y.;  Wang, Z. G.
收藏  |  浏览/下载：22/0  |  提交时间：2018/07/05
Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature 期刊论文
THIN SOLID FILMS, 2012, 卷号: 520, 页码: 6882-6887
作者:  Qi, Q.;  Zhang, W. Z.;  Shi, L. Q.;  Zhang, W. Y.;  Zhang, W.
收藏  |  浏览/下载：9/0  |  提交时间：2018/07/04
Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 页码: 3
作者:  Yin, Cong;  Ning, Xi-Jing;  Zhuang, Jun;  Xie, Yi-Qun;  Gong, Xiu-Fang
收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31
Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 253, 页码: 417-420
作者:  Zhong, X. L.;  Wang, J. B.;  Yang, S. X.;  Zhou, Y. C.
收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31
Investigation of Au/Au(100) film epitaxial growth by kinetic Monte Carlo simulation 期刊论文
ACTA PHYSICA SINICA, 2000, 卷号: 49, 页码: 297-305
作者:  Zhang, QY;  Ma, TC;  Pan, ZY;  Tang, JY
收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31

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