Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition

doi:10.1016/j.apsusc.2005.12.034

	Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition
	Zhong, X. L.; Wang, J. B.; Yang, S. X.; Zhou, Y. C.
刊名	APPLIED SURFACE SCIENCE
	2006-11-15
卷号	253 页码:417-420
关键词	BLT thin films excess bismuth content ferroelectric properties dielectric properties
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2005.12.034
英文摘要	Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on Pt/Ti/SiO2/Si(1 0 0) substrates by chemical solution deposition (CSD), and the dependence of ferroelectric and dielectric properties of the as-deposited BLT thin films on excess Bi content in precursor sols was studied. It is found that the prepared BLT thin film shows the best polarization-electric field, capacitance-voltage and dielectric constant (epsilon(r))-frequency characteristics, when the value of excess Bi content in precursor sols is 10%. In detail, its remnant polarization (2P(r)) value is 40 mu C/cm(2), the capacitance tunability is 21% measured at room temperature under conditions of an applied voltage of 8 V and measurement frequency of 10 kHz, and the epsilon(r) is 696 at 100 kHz frequency. (c) 2005 Elsevier B.V. All rights reserved.
WOS关键词	PULSED-LASER DEPOSITION ; ELECTRICAL-PROPERTIES ; EPITAXIAL-GROWTH ; MEMORIES ; TITANATE ; SI ; HETEROSTRUCTURES ; FATIGUE ; SRTIO3 ; LAYER
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000242647800003
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/26744]
专题	中国科学院近代物理研究所
通讯作者	Zhou, Y. C.
作者单位	Xiangtan Univ, Inst Modern Phys, Minist Educ, Key Lab Adv Mat & Rheol Properties, Xiangtan 411105, Peoples R China
推荐引用方式 GB/T 7714	Zhong, X. L.,Wang, J. B.,Yang, S. X.,et al. Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition[J]. APPLIED SURFACE SCIENCE,2006,253:417-420.
APA	Zhong, X. L.,Wang, J. B.,Yang, S. X.,&Zhou, Y. C..(2006).Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition.APPLIED SURFACE SCIENCE,253,417-420.
MLA	Zhong, X. L.,et al."Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition".APPLIED SURFACE SCIENCE 253(2006):417-420.