Recrystallization Phase in He-Implanted 6H-SiC

doi:10.1088/0256-307X/34/7/076101

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Recrystallization Phase in He-Implanted 6H-SiC
	Lin, Hua 3; Zhang, Li 1; Liu, Yu-Zhu 3; Li, Bing-Sheng2
刊名	CHINESE PHYSICS LETTERS
	2017-06-01
卷号	34 页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307X/34/7/076101
英文摘要	The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He+ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900 degrees C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000 degrees C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
资助项目	National Natural Science Foundation of China[11475229] ; College Students Practice Innovative Training Program of Nanjing University of Information Science Technology[201610300042]
WOS关键词	AMORPHOUS-SILICON CARBIDE ; ION ; IRRADIATION
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000410696400037
资助机构	National Natural Science Foundation of China ; College Students Practice Innovative Training Program of Nanjing University of Information Science Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/45628]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li, Bing-Sheng
作者单位	1.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Lin, Hua,Zhang, Li,Liu, Yu-Zhu,et al. Recrystallization Phase in He-Implanted 6H-SiC[J]. CHINESE PHYSICS LETTERS,2017,34:4.
APA	Lin, Hua,Zhang, Li,Liu, Yu-Zhu,&Li, Bing-Sheng.(2017).Recrystallization Phase in He-Implanted 6H-SiC.CHINESE PHYSICS LETTERS,34,4.
MLA	Lin, Hua,et al."Recrystallization Phase in He-Implanted 6H-SiC".CHINESE PHYSICS LETTERS 34(2017):4.