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The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 卷号: 19, 期号: 9, 页码: 5847-5853
作者:  Huang Jiujun;  Xing Huaizhong;  Huang Yan(第三作者);  Wang Chunrui;  Chen Xiaoshuang
收藏  |  浏览/下载：253/0  |  提交时间：2019/11/13
Enhanced gas selectivity induced by surface active oxygen in SnO/SnO2 heterojunction structures at different temperatures 期刊论文
RSC ADVANCES, 2019, 卷号: 9, 期号: 4, 页码: 1903-1908
作者:  Yin Guilin;  Sun Jianwu;  Zhang Fang;  Yu Weiwei;  Peng Fang
收藏  |  浏览/下载：40/0  |  提交时间：2019/11/13
Binary composites WO3/g-C3N4 in porous morphology: Facile construction, characterization, and reinforced visible light photocatalytic activity 期刊论文
Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2019, 卷号: 563, 期号: 无, 页码: 11-21
作者:  Chang Fei;  Zheng Jiaojiao;  Wu Feiyan;  Wang Xiaofang;  Deng Baoqing
收藏  |  浏览/下载：27/0  |  提交时间：2019/11/13
MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures 会议论文
作者:  Xu ZC;  Chen JX;  Wang FF;  Zhou Y;  Bai ZZ
收藏  |  浏览/下载：26/0  |  提交时间：2018/11/20
Photocurrent Enhancement of HgTe Quantum Dot Photodiodes by Plasmonic Gold Nano rod Structures 期刊论文
ACS NANO, 2014, 卷号: 8, 期号: 8, 页码: 8208-8216
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收藏  |  浏览/下载：13/0  |  提交时间：2016/05/16
Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 8
作者:  Wang, L;  Hu, WD;  Chen, XS;  Lu, W
收藏  |  浏览/下载：6/0  |  提交时间：2013/03/18
Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs 会议论文
2011-03-11
作者:  Wang Lin;  Hu Weida;  Chen Xiaoshuang
收藏  |  浏览/下载：6/0  |  提交时间：2012/10/25
The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108
作者:  L. Wang, W. D. Hu, X. S. Chen, W. Lu
收藏  |  浏览/下载：5/0  |  提交时间：2011/09/13
Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction 期刊论文
Solid-State Electronics, 2008, 卷号: 52
作者:  Yan Zhang;  Xin Cao;  Zheng He;  Chunquan Zhuang;  Yifang Chen
收藏  |  浏览/下载：9/0  |  提交时间：2011/10/09
Ohmic Contacts to p-Type III-V Semiconductors for the Base of Heterojunction Bipolar Transistors 期刊论文
ECS Transactions, 2006, 卷号: 3, 期号: 5, 页码: 47-56
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收藏  |  浏览/下载：6/0  |  提交时间：2016/06/05

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