The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study | |
Huang Jiujun; Xing Huaizhong; Huang Yan(第三作者); Wang Chunrui; Chen Xiaoshuang | |
刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
2019 | |
卷号 | 19期号:9页码:5847-5853 |
关键词 | n-p Type Transition ZnSe/Ge Nanowire Electronic Structure Property |
DOI | 10.1166/jnn.2019.16499 |
英文摘要 | The structure and electronic properties of the bare and hydrogen-passivated ZnSe/Ge bi-axial nanowires have been calculated by means of the first principle calculation based on density functional theory. Five different types of nanowires with different concentrations all grown along [1 1 1] direction are considered. Band gaps of bare ZnSe/Ge bi-axial nanowires are smaller than those of hydrogen-passivated ZnSe/Ge nanowires at the same doping concentrations. Both the bare and hydrogen-passivated nanowires have lower band gap at a higher Ge components. It is shown detailedly that with increasing of Ge doping concentrations, the main sources of conduction band minimum and valence band maximum of nanowires varied from the p-state of Se and Ge to the p-state of Ge. It is found clearly that there is a transition from the n-type to the p-type characteristics at the doping concentration 0.4211. Whereas, when the Ge composition is increased to 0.8421, the nanowires also have a transition from the p-type to the n-type characteristics. In addition, the structural stability and the cohesive energies of ZnSe/Ge bi-coaxial nanowires are changed obviously with different Ge components. The results offer efficiently guidance to explore their potential applications in photoelectronics. |
WOS记录号 | WOS:463891600061 |
内容类型 | 期刊论文 |
源URL | [http://202.127.2.71:8080/handle/181331/12377] |
专题 | 上海技术物理研究所_上海技物所 |
推荐引用方式 GB/T 7714 | Huang Jiujun,Xing Huaizhong,Huang Yan,et al. The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2019,19(9):5847-5853. |
APA | Huang Jiujun,Xing Huaizhong,Huang Yan,Wang Chunrui,&Chen Xiaoshuang.(2019).The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,19(9),5847-5853. |
MLA | Huang Jiujun,et al."The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 19.9(2019):5847-5853. |
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