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	MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures
	Xu ZC; Chen JX; Wang FF; Zhou Y; Bai ZZ; Xu JJ; Xu QQ; Jin C; He L
	2017
DOI	10.1016/j.jcrysgro.2017.03.041
英文摘要	In the paper the whole heterojunction structure design process in LWIR type-II InAs/GaSb superlattices (T2SLs) detectors has been presented. The high quality T2SLs materials were grown and the high performance double heterojunction LWIR detectors have been fabricated. In the double heterojunction LWIR detectors a electrons barrier layer and a holes barrier layer were designed and introduced successively based on the electrical properties measurement and compensation doping of the T2SLs intrinsic material. The processed double heterojunction structure photodiodes had a 100% cutoff wavelength of 12.5 mu m at 80 K. The peak current responsivity was 2.5 A/W under zero applied bias corresponding to a quantum efficiency of 30%. The R(0)A product at 80 K is 14.5 Omega cm(2) which leads to the peak detectivity D* of 1.4 x 10(11) cm Hz(1/2)/W for the detector. (C) 2017 Elsevier B.V. All rights reserved.
语种	英语
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12095]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Xu ZC,Chen JX,Wang FF,et al. MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures[C]. 见:.

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