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Welding of reduced graphene oxide with high quality and sizeable lateral size by coupling reaction 期刊论文
MATERIALS LETTERS, 2020, 卷号: 261, 页码: 127010
作者:  Ting Wang;   Zhiduo Liu;   Gang Wang ;   Qinglei Guo;   Menghan Zhao ;   Wei Zhu ;   Jiurong Li;   Xiaohu Zheng ;   Da Chen
收藏  |  浏览/下载：18/0  |  提交时间：2021/11/30
Microstructural and mechanical characteristics of laser welding of Ti6Al4V and lead metal 期刊论文
journal of materials processing technology, 2012, 卷号: 212, 期号: 7, 页码: 1520-1527
Zhao, SS; Yu, G; He, XL; Hu, YW
收藏  |  浏览/下载：6/0  |  提交时间：2013/02/05
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 106104
Ma, ZH; Cao, Q; Zuo, YH; Zheng, J; Xue, CL; Cheng, BW; Wang, QM
收藏  |  浏览/下载：24/0  |  提交时间：2012/02/06
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  Yu F
收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
materials letters, 2011, 卷号: 65, 期号: 4, 页码: 667-669
作者:  Liu C
收藏  |  浏览/下载：63/7  |  提交时间：2011/07/05

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