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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Scanning electron microscopy observation of in-device inas/alas quantum dots by selective etching of capping layers 期刊论文 Modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 作者:  Sun, Jie;  Zhou, Dayong;  Li, Ruoyuan;  Zhao, Chang;  Ye, Xiaoling 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Iii-v semiconductors  Quantum dots  Scanning electron microscopy  Selective etching   Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文 modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG 收藏  |  浏览/下载：64/5  |  提交时间：2010/03/08 III-V semiconductors  quantum dots  scanning electron microscopy  selective etching   Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Crystallographic tilt in gan layers grown by epitaxial lateral overgrowth 期刊论文 Science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467 作者:  Feng, G;  Zheng, XH;  Zhu, JJ;  Shen, XM;  Zhang, BS 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Gan  Epitaxial lateral overgrowth  Crystallographic tilt  Double crystal x-ray diffraction   Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文 science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467 作者:  Zhao DG 收藏  |  浏览/下载：68/0  |  提交时间：2010/08/12 GaN  epitaxial lateral overgrowth  crystallographic tilt  double crystal X-ray diffraction  FILMS  DEFECTS  GAAS   High-speed and high-power 1.3 mu m ingaasp/inp selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文 Japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 作者:  Zhang, BJ;  Yi, MB;  Song, JF;  Gao, DS;  Zhu, NH 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Semiconductor laser  Heterostructure  Proton bombardment  Modulation bandwidth  Mocvd   High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 Zhang BJ; Yi MB; Song JF; Gao DS; Zhu NH; Wu RH; Wang W 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 semiconductor laser  heterostructure  proton bombardment  modulation bandwidth  MOCVD  CURRENT BLOCKING LAYERS  INNER-STRIPE LASERS   High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides 期刊论文 Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1997, 卷号: 132, 期号: 4, 页码: 599-606 作者:  Han, DJ;  Chan, KT;  Zhuang, WR;  Wang, WX 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1997, 卷号: 132, 期号: 4, 页码: 599-606 Han DJ; Chan KT; Zhuang WR; Wang WX 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 GATE SWITCH ARRAYS  LASERS  STEP  INP  SUPERLATTICE  INTEGRATION  ALGAAS