Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

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	Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
	Zhao DG
刊名	science in china series a-mathematics physics astronomy
	2002
卷号	45 期号:11 页码:1461-1467
关键词	GaN epitaxial lateral overgrowth crystallographic tilt double crystal X-ray diffraction FILMS DEFECTS GAAS
ISSN号	1006-9283
通讯作者	feng g,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	the crystallographic tilt in gan layers grown by epitaxial lateral overgrowth (elo) on sapphire (0001) substrates was investigated by using double crystal x-ray diffraction (dc-xrd). it was found that elo gan stripes bent towards the sinx mask in the direction perpendicular to seeding lines. each side of gan (0002) peak in dc-xrd rocking curves was a broad peak related with the crystallographic tilt. this broad peak split into two peaks (denoted as a and b), and peak b disappeared gradually when the mask began to be removed by selective etching. only narrow peak a remained when the sinx mask was removed completely. a model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: one is the non-uniformity elastic deformation caused by the interphase force between the elo gan layer and the sinx mask. the other is the plastic deformation, which is attributed to the change of the threading dislocations (tds)-from vertical in the window regions to the lateral in the regions over the mask.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11738]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth[J]. science in china series a-mathematics physics astronomy,2002,45(11):1461-1467.
APA	Zhao DG.(2002).Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth.science in china series a-mathematics physics astronomy,45(11),1461-1467.
MLA	Zhao DG."Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth".science in china series a-mathematics physics astronomy 45.11(2002):1461-1467.