High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

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	High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides
	Han DJ ; Chan KT ; Zhuang WR ; Wang WX
刊名	nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
	1997
卷号	132 期号:4 页码:599-606
关键词	GATE SWITCH ARRAYS LASERS STEP INP SUPERLATTICE INTEGRATION ALGAAS
ISSN号	0168-583x
通讯作者	han dj,mcmaster univ,cemd,rm a322,hamilton,on l8s 4l7,canada.
中文摘要	we have shown that high energy ion implantation enhanced intermixing (he-iiei) technology for quantum well (qw) structures is a powerful technique which can be used to blue shift the band gap energy of a qw structure and therefore decrease its band gap absorption. room temperature (rt) photoluminescence (pl) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed qw structure and the reduction of band gap absorption, record large blue shifts in pl peaks of 132 nm for a 4-qw ingaas/ingaasp/inp structure have been demonstrated in the intermixed regions of the qw wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. this feature makes this technology very attractive for selective intermixing in selected areas of an mqw structure. the dramatical reduction in band gap absorption for the inp based mqw structure has been investigated experimentally. it is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 db/cm for the te mode and 119 db/cm for the tm mode with respect to the control samples. electro-absorption characteristics have also been clearly observed in the intermixed structure. current-voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. we have achieved a successful fabrication and operation of y-junction optical switches (jos) based on mqw semiconductor optical amplifiers using he-iiei technology to fabricate the low loss passive waveguide. (c) 1997 published by elsevier science b.v.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13302]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han DJ,Chan KT,Zhuang WR,et al. High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,1997,132(4):599-606.
APA	Han DJ,Chan KT,Zhuang WR,&Wang WX.(1997).High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,132(4),599-606.
MLA	Han DJ,et al."High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 132.4(1997):599-606.