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科研机构
半导体研究所 [38]
内容类型
期刊论文 [36]
会议论文 [2]
发表日期
2011 [2]
2010 [3]
2009 [7]
2008 [4]
2006 [2]
2005 [2]
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学科主题
半导体材料 [9]
半导体物理 [9]
光电子学 [5]
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Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy
期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:
Jin, Lan
;
Zhou, Huiying
;
Qu, Shengchun
;
Wang, Zhanguo
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/12
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Structural and magnetic properties of gan:sm:eu films fabricated by co-implantation method
期刊论文
Materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
作者:
Sun, Lili
;
Liu, Chao
;
Li, Jianming
;
Wang, Junxi
;
Yan, Fawang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Magnetic materials
Semiconductors
Ion implantation
Ferromagnetic modification of gan film by cu+ ions implantation
期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2010, 卷号: 268, 期号: 2, 页码: 123-126
作者:
Zhang, B.
;
Chen, C. C.
;
Yang, C.
;
Wang, J. Z.
;
Shi, L. Q.
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  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Nonmagnetic element doped semiconductor
Cu ion implantation
Gan-based dms
Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
期刊论文
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili)
;
Liu C (Liu Chao)
;
Li JM (Li Jianming)
;
Wang JX (Wang Junxi)
;
Yan FW (Yan Fawang)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:225/60
  |  
提交时间:2010/05/07
Magnetic materials
Semiconductors
Ion implantation
Structural, morphological, and magnetic characteristics of cu-implanted nonpolar gan films
期刊论文
Applied surface science, 2009, 卷号: 256, 期号: 5, 页码: 1361-1364
作者:
Sun, Lili
;
Yan, Fawang
;
Zhang, Huixiao
;
Wang, Junxi
;
Zeng, Yiping
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/05/12
Diluted magnetic semiconductors (dmss)
Ion implantation
Nonpolar a-plane gan:cu films
Room-temperature ferromagnetic properties
The impact of implantation dose on the characteristics of diluted-magnetic nonpolar gan:cu films
期刊论文
Materials letters, 2009, 卷号: 63, 期号: 29, 页码: 2574-2576
作者:
Sun, Lili
;
Yan, Fawang
;
Zhang, Huixiao
;
Wang, Junxi
;
Zeng, Yiping
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/12
Diluted magnetic semiconductors (dmss)
Ion implantation
Nonpolar a-plane gan-cu films
Room-temperature ferromagnetic properties
Influence of implantation energy on the characteristics of mn-implanted nonpolar a-plane gan films
期刊论文
Materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
作者:
Sun, Lili
;
Yan, Fawang
;
Wang, Junxi
;
Zhang, Huixiao
;
Zeng, Yiping
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Diluted magnetic semiconductors (dmss)
Implantation energy
Nonpolar a-plane gan:mn films
Room temperature
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films
期刊论文
materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
Sun LL
;
Yan FW
;
Wang JX
;
Zhang HX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:254/68
  |  
提交时间:2010/03/08
Diluted magnetic semiconductors (DMSs)
Implantation energy
Nonpolar a-plane GaN:Mn films
Room temperature
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