CORC

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Stability of GaAs photocathodes under different intensities of illumination 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113
Zou JJ (Zou Ji-Jun); Chang BK (Chang Ben-Kang); Yang Z (Yang Zhi); Gao P (Gao Pin); Qiao JL (Qiao Jian-Liang); Zeng YP (Zeng Yi-Pine)
收藏  |  浏览/下载:36/0  |  提交时间:2010/03/29
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
作者:  Zhao DG
收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:  Zhao DG
收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载:62/0  |  提交时间:2010/08/12
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Zhu JJ; Liu SY; Liang JW
收藏  |  浏览/下载:4/0  |  提交时间:2010/11/15
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) 期刊论文
thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 307-311
Zhu JJ; Liu SY; Liang JW
收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
The influence of oxygen content on photoluminescence from Er-doped SiOx 会议论文
symposium e on luminescent materials at the 1999 mrs spring meeting, san francisco, ca, apr 05-08, 1999
Chen WD; Liang JJ; Hsu CC
收藏  |  浏览/下载:7/0  |  提交时间:2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
6th international conference on the formation of semiconductor interfaces (icfsi-6), cardiff, wales, jun 23-27, 1997
作者:  Xu B
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15


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