Stability of GaAs photocathodes under different intensities of illumination | |
Zou JJ (Zou Ji-Jun) ; Chang BK (Chang Ben-Kang) ; Yang Z (Yang Zhi) ; Gao P (Gao Pin) ; Qiao JL (Qiao Jian-Liang) ; Zeng YP (Zeng Yi-Pine) | |
刊名 | acta physica sinica |
2007 | |
卷号 | 56期号:10页码:6109-6113 |
关键词 | GaAs photocathode |
ISSN号 | issn: 1000-3290 |
通讯作者 | chang, bk, nanjing univ sci & technol, inst elect engn & opto elect technol, nanjing 210094, peoples r china. 电子邮箱地址: bkchang@mail.njust.edu.cn |
中文摘要 | the photocurrent curves of reflection-mode gaas photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 ix, respectively, were measured using a multi-information measurement system. the calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. the lifetime of cathode, illuminated by white light with an intensity of 100 ix, while no photocurrent was being drawn during the illumination, was 100 min. through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. the quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 ix, were measured also. the measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2010-03-29 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/9226] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zou JJ ,Chang BK ,Yang Z ,et al. Stability of GaAs photocathodes under different intensities of illumination[J]. acta physica sinica,2007,56(10):6109-6113. |
APA | Zou JJ ,Chang BK ,Yang Z ,Gao P ,Qiao JL ,&Zeng YP .(2007).Stability of GaAs photocathodes under different intensities of illumination.acta physica sinica,56(10),6109-6113. |
MLA | Zou JJ ,et al."Stability of GaAs photocathodes under different intensities of illumination".acta physica sinica 56.10(2007):6109-6113. |
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