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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18504
Zuo YH; Cao QA; Zhang Y; Zhang LZ; Guo JC; Xue CL; Cheng BW; Wang QM
收藏  |  浏览/下载:56/4  |  提交时间:2011/07/05
Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 7, 页码: 4524-4529
Guo JC (Guo Jian-Chuan); Zuo YH (Zuo Yu-Hua); Zhang Y (Zhang Yun); Zhang LZ (Zhang Ling-Zi); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载:30/0  |  提交时间:2010/08/17
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 7, 页码: 3044-3048
Ding WC; Liu Y; Zhang Y; Guo JC; Zuo YH; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载:117/2  |  提交时间:2010/03/08
Simulation research of nonlinear behavior induced by the charge-carrier effect in resonant-cavity-enhanced photodetectors 期刊论文
journal of lightwave technology, 2007, 卷号: 25, 期号: 9, 页码: 2783-2790
Guo JC (Guo Jianchuan); Zuo YH (Zuo Yuhua); Zhang Y (Zhang Yun); Ding WC (Ding Wuchang); Cheng BW (Cheng Buwen); Yu JZ (Yu, Jinzhong); Wang QM (Wang, Qiming)
收藏  |  浏览/下载:39/0  |  提交时间:2010/03/29
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载:83/0  |  提交时间:2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272
Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.)
收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11
Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 7, 页码: art.no.071908
作者:  Jiang DS;  Zhang JC;  Yang H;  Zhang JC;  Zhang JC
收藏  |  浏览/下载:64/14  |  提交时间:2010/03/17
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
作者:  Zhao DG
收藏  |  浏览/下载:207/73  |  提交时间:2010/03/09
Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells 期刊论文
journal of applied crystallography, 2004, 卷号: 37, 期号: 0, 页码: 391-394
Zhang JC; Wang JF; Wang YT; Wu M; Liu JP; Zhu JJ; Yang H
收藏  |  浏览/下载:275/86  |  提交时间:2010/03/09


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