InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm | |
Zuo YH ; Cao QA ; Zhang Y ; Zhang LZ ; Guo JC ; Xue CL ; Cheng BW ; Wang QM | |
刊名 | chinese physics b |
2011 | |
卷号 | 20期号:1页码:article no.18504 |
关键词 | high responsivity diluted waveguide evanescent coupling waveguide photodiode TRAVELING-CARRIER PHOTODIODES HIGH-POWER 1.55-MU-M WAVELENGTH PERFORMANCE PHOTODETECTORS PHYSICS DESIGN LAYER |
ISSN号 | 1674-1056 |
通讯作者 | zuo, yh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. yhzuo@red.semi.ac.cn |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | national high technology research and development program of china [2006cb302802] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | in this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. high responsivity (> 1a/w), high saturation power (> 45 ma) in the static state and extremely low dark current density (0.04 pa/mu m(2)) with 3 db bandwidth at 13.4 ghz have been achieved. |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/20995] |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Zuo YH,Cao QA,Zhang Y,et al. InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm[J]. chinese physics b,2011,20(1):article no.18504. |
APA | Zuo YH.,Cao QA.,Zhang Y.,Zhang LZ.,Guo JC.,...&Wang QM.(2011).InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm.chinese physics b,20(1),article no.18504. |
MLA | Zuo YH,et al."InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm".chinese physics b 20.1(2011):article no.18504. |
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