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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109 Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS 收藏  |  浏览/下载：53/4  |  提交时间：2010/03/08 circular dichroism  diffraction gratings  diffusion  gallium arsenide  homodyne detection  III-V semiconductors  spin dynamics  spin polarised transport   InN nanoflowers grown by metal organic chemical vapor deposition 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 7, 页码: art.no.071113 Kang TT (Kang Ting-Ting); Liu X (Liu Xianglin); Zhang RQ (Zhang Ri Q.); Hu WG (Hu Wei G.); Cong G (Cong Guangwei); Zhao FA (Zhao Feng-Ai); Zhu Q (Zhu Qinsheng) 收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11 CRYSTAL-GROWTH  NITRIDE  NANOWIRES   Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 期刊论文 chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221 Zhou DY; Lan Q; Kong YC; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 molecular beam epitaxy (MBE) step bunching  InGaAs  quantum wire  SURFACE-DIFFUSION  GROWTH  DOTS   High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere 期刊论文 physical review b, 1999, 卷号: 59, 期号: 11, 页码: 7500-7506 Pajot B; Clerjaud B; Xu ZJ 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 ION-IMPLANTED SILICON  UNIAXIAL-STRESS  ABSORPTION  NITROGEN  DEFECT  GERMANIUM  COMPLEXES  OXYGEN  LEVEL  BANDS   Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN 期刊论文 journal of applied physics, 1999, 卷号: 85, 期号: 9, 页码: 6430-6433 Sun WH; Chen KM; Yang ZJ; Li J; Tong YZ; Jin SX; Zhang GY; Zhang QL; Qin GG 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 RESONANT RAMAN-SCATTERING  HYDROGEN  CARBON  FILMS  GAAS  ABSORPTION  GROWTH   Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP 期刊论文 applied physics letters, 1998, 卷号: 73, 期号: 9, 页码: 1275-1277 Fung S; Zhao YW; Beling CD; Xu XL; Gong M; Sun NF; Sun TN; Chen XD; Zhang RG; Liu SL; Yang GY; Qian JJ; Sun MF; Liu XL 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 SEMICONDUCTORS  HYDROGEN  DEFECTS  MECHANISM