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Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress 期刊论文
aip advances, 2016, 卷号: 6, 期号: 4, 页码: 045204
Dan Su; Xiuming Dou; Xuefei Wu; Yongping Liao; Pengyu Zhou; Kun Ding; Haiqiao Ni; Zhichuan Niu; Haijun Zhu; Desheng Jiang; Baoquan Sun
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/16
Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy 期刊论文
journal of materials science and technology, 2013, 卷号: 29, 期号: 12, 页码: 1134-1138
Liu, Yunyan; Yang, Shanying; Wei, Gongxiang; Pan, Jiaoqing; Yuan, Yuzhen; Cheng, Chuanfu
收藏  |  浏览/下载：20/0  |  提交时间：2014/04/30
Biaxial stress-induced giant bandgap shift in BiFeO3 epitaxial films 期刊论文
physica status solidi-rapid research letters, 2012, 卷号: 6, 期号: 1, 页码: 37-39
Fu, Z; Yin, ZG; Chen, NF; Zhang, XW; Zhang, H; Bai, YM; Wu, JL
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/17
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：17/0  |  提交时间：2010/12/28
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05
GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14

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