CORC

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CORC

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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40495
Liu Z; Wang JX; Wang XL; Hu GX; Guo LC; Liu HX; Li JP; Li JM; Zeng YP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY
收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：293/3  |  提交时间：2010/08/12
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Wei X; Wang GH; Zhang GZ; Zhu XP; Ma XY; Chen LH
收藏  |  浏览/下载：83/2  |  提交时间：2010/08/12
Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 85-90
Gao YZ; Kan H; Gao FS; Gong XY; Yamaguchi T
收藏  |  浏览/下载：85/4  |  提交时间：2010/08/12
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 518-522
作者:  Xu B
收藏  |  浏览/下载：105/8  |  提交时间：2010/08/12
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152
Wu J; Lin F
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12

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