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Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
Zhao YM (Zhao Yong-Mei); Sun GS (Sun Guo-Sheng); Li JY (Li Jia-Ye); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Li JM (Li Jin-Min)
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载:167/71  |  提交时间:2010/03/29
ALN  IMPURITIES  DONOR  
Structural, magnetic properties and photoemission study of Ni-doped ZnO 期刊论文
solid state communications, 2005, 卷号: 135, 期号: 7, 页码: 430-433
作者:  Yin ZG
收藏  |  浏览/下载:31/12  |  提交时间:2010/03/17
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Wei X; Wang GH; Zhang GZ; Zhu XP; Ma XY; Chen LH
收藏  |  浏览/下载:81/2  |  提交时间:2010/08/12
Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing 期刊论文
applied surface science, 1996, 卷号: 100, 期号: 0, 页码: 530-533
Chen WD; Xie XL; Cui YD; Chen CH; Hsu CC
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17
GE  


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