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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：69/3  |  提交时间：2010/03/08
Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744
Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
High-precision determination of lattice constants and structural characterization of InN thin films 期刊论文
journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279
Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H
收藏  |  浏览/下载：108/0  |  提交时间：2010/04/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 10, 页码: art.no.101902
Peng WQ; Qu SC; Cong GW; Wang ZG
收藏  |  浏览/下载：625/5  |  提交时间：2010/04/11
Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.251910
Wan KS (Wan Keshu); Porporati AA (Porporati Alessandro Alan); Feng G (Feng Gan); Yang H (Yang Hui); Pezzotti G (Pezzotti Giuseppe)
收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11
Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12
Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12
Annealing behavior of InAs/GaAs quantum dot structures 期刊论文
journal of electronic materials, 1998, 卷号: 27, 期号: 2, 页码: 59-61
Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12

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